gsib620n, gsib640n, gsib660n, gsib680n www.vishay.com vishay general semiconductor revision: 26-apr-13 1 document number: 89385 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 single-phase single in-line bridge rectifiers features ? ul recognition file number e54214 ? thin single in-iine package ? glass passivated chip junction ? high surge current capability ? high case dielectric strength of 1500 v rms ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for switching power supply, home appliances, office equipment, industrial au tomation applications. mechanical data case: gsib-5s ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body mounting torque: 10 cm-kg (8.8 in-lbs) maximum recommended torque: 5.7 cm-kg (5 in-lbs) notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on pcb with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0. 375" (9.5 mm) lead length primary characteristics package gsib-5s i f(av) 6.0 a v rrm 200 v, 400 v, 600 v, 800 v i fsm 180 a i r 10 a v f 0.95 v t j max. 150 c diode variations in-line case style gsib-5s ~ ~ ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gsib620n gsib640n gsib660n gsib680n unit maximum repetitive pe ak reverse voltage v rrm 200 400 600 800 v maximum rms voltage v rms 140 280 420 560 v maximum dc blocking voltage v dc 200 400 600 800 v maximum average forward rectified output current at t c = 100 c i f(av) (1) 6.0 a t a = 25 c i f(av) (2) 2.8 peak forward surge current single sine-wave ? superimposed on rated load (jedec method) i fsm 180 a rating for fusing (t < 8.3 ms) i 2 t 120 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
gsib620n, gsib640n, gsib660n, gsib680n www.vishay.com vishay general semiconductor revision: 26-apr-13 2 document number: 89385 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on pcb with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0. 375" (9.5 mm) lead length (3) recommended mounting position is to bolt down on heatsi nk with silicone therma l compound for maximum he at transfer with #6 scre w ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve output rectified current fig. 2 - maximum non-repeti tive peak forward surge current per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol g sib620n gsib640n gsib660n gsib680n unit maximum instantaneous ? forward voltage drop per diode i f = 3.0 a v f 0.95 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c i r 10 a t a = 125 c 250 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gsib620n gsib640n gsib660n gsib680n unit maximum thermal resistance r ? ja (2) 22 c/w r ? jc (1) 3.4 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gsib660n-m3/45 7.0 45 20 tube 0 50 100 150 0 2 4 6 8 10 temperature (c) average forward output current (a) heatsink mounting, t c pcb mounting, t a 1 10 100 0 60 30 120 90 180 150 210 t j = t j max. single sine-wave number of cycles at 60 hz peak forward surge current (a) 1.0 cycle
gsib620n, gsib640n, gsib660n, gsib680n www.vishay.com vishay general semiconductor revision: 26-apr-13 3 document number: 89385 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 6 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) 0.3 1.1 0.01 10 0.1 1 100 0.5 0.7 0.9 instantaneous forward voltage (v) instantaneous forward current (a) t j = 150 c t j = 125 c t j = 25 c 0.4 1.2 0.6 0.8 1.0 1000 20 60 40 100 80 0.01 0.1 1 10 100 t j = 150 c t j = 125 c t j = 25 c percent of rated peak reverse voltage (%) instantaneous reverse current (a) 0.1 1 10 100 10 100 1000 1 reverse voltage (v) junction capaci tance (pf) 0.01 0.1 1 10 100 0.1 10 100 t - heating time (s) transient thermal impedance (c/w) 1 2.5 0.2 2.2 0.2 1 0.1 10 0.2 7.5 0.2 4 0.2 5 20 0.3 17 . 5 0.5 11 0.2 2.7 0.2 3.5 0.2 3.2 0.2 0.7 0.1 4.6 0.2 3.6 0.2 + 7.5 0.2 30 0.3 case style gsib-5s
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